Datasheet Details
| Part number | 2SC5218 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.18 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5218 Datasheet
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| Part number | 2SC5218 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.18 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5218 Datasheet
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·High Gain Bandwidth Product fT = 9 GHz TYP.
·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF ~ UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5218 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5218.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5218 | NPN TRANSISTOR | Hitachi Semiconductor |
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2SC5218 | Silicon NPN Epitaxial Type Transistor | Renesas |
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