2SC5218 Datasheet and Specifications PDF

The 2SC5218 is a NPN TRANSISTOR.

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Part Number2SC5218 Datasheet
ManufacturerHitachi Semiconductor
Overview 2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ.
* High gain bandwidth product fT = 9 GHz typ
* High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base .
Part Number2SC5218 Datasheet
DescriptionSilicon NPN Epitaxial Type Transistor
ManufacturerRenesas
Overview To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric .
* High gain bandwidth product fT = 9 GHz typ
* High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YK
*”. Attention: This device is very sensitive to electro static discharge. It is recommended to adop.
Part Number2SC5218 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfo. 10μA ; IE= 0 15 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 1 μA ICEO Collector Cutoff Current VCE= 9V; RBE= ∞ 1 mA IEBO Emitter Cutoff Current VEB= 1.5V; IC= 0 10 μA hFE DC Current Gain IC= 20mA ; VCE= 5V 50 250 fT Current-Gain
*Bandwidth Product IC= 20mA ; VCE= 5V 6.0 9.