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2SC5480

Manufacturer: Inchange Semiconductor

2SC5480 datasheet by Inchange Semiconductor.

2SC5480 datasheet preview

2SC5480 Datasheet Details

Part number 2SC5480
Datasheet 2SC5480_InchangeSemiconductor.pdf
File Size 178.40 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
2SC5480 page 2

2SC5480 Overview

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;.

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