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2SC5480 - Silicon NPN Triple Diffused Planar Transistor

Key Features

  • High breakdown voltage VCES = 1500 V.
  • Isolated package TO.
  • 3PFM.
  • Built-in damper diode Outline TO.
  • 3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter www. DataSheet4U. com www. DataSheet4U. com www. DataSheet4U. com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitte.

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2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode Outline TO–3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1.