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2SC5480 - Silicon NPN Power Transistor

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Part number 2SC5480
Manufacturer Inchange Semiconductor
File Size 178.40 KB
Description Silicon NPN Power Transistor
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Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector

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