2SC5480 datasheet by Inchange Semiconductor.
| Part number | 2SC5480 |
|---|---|
| Datasheet | 2SC5480_InchangeSemiconductor.pdf |
| File Size | 178.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC5480 | Silicon NPN Triple Diffused Planar Transistor | Hitachi Semiconductor |
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