Datasheet Details
| Part number | 2SC5480 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5480_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480.
| Part number | 2SC5480 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5480_InchangeSemiconductor.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 28 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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