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2SC5480 - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 28 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.