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2SD1126 - Silicon NPN Darlington Power Transistor

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Datasheet Details

Part number
2SD1126
Manufacturer
Inchange Semiconductor
File Size
209.24 KB
Datasheet
2SD1126_InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor

2SD1126 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 5A. Low Saturation Voltage. Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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