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Inchange Semiconductor

2SD1126 Datasheet Preview

2SD1126 Datasheet

Silicon NPN Darlington Power Transistor

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1126
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 5A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 10 A
ICP Collector Current-Peak
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
15 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn




Inchange Semiconductor

2SD1126 Datasheet Preview

2SD1126 Datasheet

Silicon NPN Darlington Power Transistor

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1126
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE=
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA
1.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
3.0 V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB=B 10mA
2.0 V
VBE(sat)-2
ICBO
ICEO
hFE
VECF
Base-Emitter Saturation Voltage
i.cnCollector Cutoff Current
.iscsemCollector Cutoff Current
DC Current Gain
wwwC-E Diode Forward Voltage
IC= 10A; IB= 0.1A
VCB= 120V; IE=0
VCE= 100V; RBE=
IC= 5A; VCE= 3V
IF= 10A
1000
3.5 V
100 μA
10 μA
20000
3.0 V
Switching times
ton Turn-on Time
toff Turn-Off Time
IC= 5A, IB1= -IB2= 10mA
0.8 μs
8.0 μs
isc Websitewww.iscsemi.cn
2


Part Number 2SD1126
Description Silicon NPN Darlington Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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