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2SD1126 - Silicon NPN Darlington Power Transistor

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Part number 2SD1126
Manufacturer Inchange Semiconductor
File Size 209.24 KB
Description Silicon NPN Darlington Power Transistor
Datasheet download datasheet 2SD1126 Datasheet
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications.

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