2SD1126 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor 2SD1126 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain :

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2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 1

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2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 1

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2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 ADE-208-904 (Z) 1st. Edition September 2000 1. Base 2. Col

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2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 ADE-208-904 (Z) 1st. Edition September 2000 1. Base 2. Col

(7 views)