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2SD1195 - Silicon NPN Darlington Power Transistor

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Datasheet Details

Part number 2SD1195
Manufacturer Inchange Semiconductor
File Size 210.76 KB
Description Silicon NPN Darlington Power Transistor
Datasheet download datasheet 2SD1195_InchangeSemiconductor.pdf

2SD1195 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 2.5A Low Saturation Voltage Complement to Type 2SB885 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collecto

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