Datasheet Details
| Part number | 2SD1336 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.00 KB |
| Description | Power Transistor |
| Download | 2SD1336 Download (PDF) |
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| Part number | 2SD1336 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.00 KB |
| Description | Power Transistor |
| Download | 2SD1336 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1336 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
L= 10mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Darlington Power Transistor 2SD1336.
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