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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1314
DESCRIPTION ·High DC Current Gain
:hFE= 100(Min) @ IC= 15A ·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 2.0V (Max) @ IC= 15A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power switching and motor control
applications.