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2SD1314
TOSHIBA Transistor
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Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1314
Unit: mm
High Power Switching Applications Motor Control Applications
• • •
High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A) High speed: tf = 3 μs (max) (IC = 15 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 450 6 15 30 1.0 150 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Weight: 9.75 g (typ.
2SD1314 Datasheet
