Datasheet Details
| Part number | 2SD1525 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 213.89 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1525_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.89 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1525_InchangeSemiconductor.pdf |
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·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1525 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 20A, IB= 0.2A ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff current VEB= 5V, IC= 0 hFE-1 DC Current Gain IC= 20A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1525 | NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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