Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
: hFE= 1000(Min.)@ IC= 20A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current switching...
