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2SD1640 - Silicon NPN Power Transistor

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Part number 2SD1640
Manufacturer Inchange Semiconductor
File Size 205.62 KB
Description Silicon NPN Power Transistor
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High DC Current Gain- : hFE = 4000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low -frequency output amplifier applications.

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