Datasheet Details
| Part number | 2SD1706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.00 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD1706_InchangeSemiconductor.pdf
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The 2SD1706 is Silicon NPN Power Transistor designed by Inchange Semiconductor.
| Part number | 2SD1706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.00 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD1706_InchangeSemiconductor.pdf
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-B
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