Datasheet Details
| Part number | 2SD1706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.00 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1706 Download (PDF) |
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| Part number | 2SD1706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.00 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1706 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A ·Complement to Type 2SB1155 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 25 A 80 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1706 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A;
IB= 0.35A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A;
isc Silicon NPN Power Transistor 2SD1706.
| Part Number | Description |
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| 2SD1709 | Silicon NPN Power Transistor |
| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1714 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
| 2SD1728 | Power Transistor |
| 2SD1730 | Power Transistor |
| 2SD1731 | Power Transistor |