| Part number | 2SD1714 |
|---|---|
| Datasheet | 2SD1714_InchangeSemiconductor.pdf |
| File Size | 214.45 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1714 TC=25℃ unless otherwise specified SYMBOL PARAMETER...
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1706 | Silicon NPN Power Transistor |
| 2SD1709 | Silicon NPN Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
| 2SD1728 | Power Transistor |
| 2SD1730 | Power Transistor |
| 2SD1731 | Power Transistor |
