2SD1706
2SD1706 is manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- Good Linearity of hFE
- Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 7A
- plement to Type 2SB1155
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching...
