| Part number | 2SD1706 |
|---|---|
| Datasheet | 2SD1706_InchangeSemiconductor.pdf |
| File Size | 216.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1706 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1709 | Silicon NPN Power Transistor |
| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1714 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
| 2SD1728 | Power Transistor |
| 2SD1730 | Power Transistor |
| 2SD1731 | Power Transistor |
