Datasheet Details
| Part number | 2SD1720 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.90 KB |
| Description | Power Transistor |
| Download | 2SD1720 Download (PDF) |
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|
| Part number | 2SD1720 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.90 KB |
| Description | Power Transistor |
| Download | 2SD1720 Download (PDF) |
|
|
|
·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1291 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
isc Silicon NPN Power Transistor 2SD1720.
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