2SD180
2SD180 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.)
- Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A
- Good Linearity of h FE
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Audio frequency power amplifier and low speed switching
- Suitable for output stages of 30 ~35 watts audio amplifier and DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature
-65~＋150 ℃
2SD180 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
