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2SD1802 Datasheet PDF

Galaxy Century Microelectronics 2SD1802

NPN Epitaxial Planar Silicon Transistors

Part No. 2SD1802
Datasheet 2SD1802 Download
Manufacturer Galaxy Century Microelectronics
Description NPN Epitaxial Planar Silicon Transistors
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2SD1802 datasheet page 1 preview

FEATURES

● Adoption of FBET,MBIT processes. Pb
● Large current capacity and wide ASO. Lead-free
● Low collector-to-emitter saturation voltage.
● Fast switching speed.
● Small and slim package making it easy to Make 2SB1802-used sets smaller.

APPLICATIONS

● High-Current Switching

APPLICATIONS

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● Voltage regulators,relay drivers,lamp drivers, Electrical equipment. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current 3A ICP Collector Power Dissipation 6A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)018 Rev.A 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1802 ELECTRICAL CHARACTER
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