Galaxy Century Microelectronics 2SD1802
NPN Epitaxial Planar Silicon Transistors
FEATURES
● Adoption of FBET,MBIT processes. Pb● Large current capacity and wide ASO. Lead-free
● Low collector-to-emitter saturation voltage.
● Fast switching speed.
● Small and slim package making it easy to Make 2SB1802-used sets smaller.
APPLICATIONS
● High-Current SwitchingAPPLICATIONS
.● Voltage regulators,relay drivers,lamp drivers, Electrical equipment. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current 3A ICP Collector Power Dissipation 6A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)018 Rev.A 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1802 ELECTRICAL CHARACTER