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2SD1802 Datasheet PDF

onsemi 2SD1802

Bipolar Transistor

Part No. 2SD1802
Datasheet 2SD1802 Download
Manufacturer
onsemi
Description Bipolar Transistor
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2SD1802 datasheet page 1 preview

FEATURES

● Adoption of FBET and MBIT Processes
● Large Current Capacitance and Wide ASO
● Low Collector to Emitter Saturation Voltage
● Fast Switching Speed
● Small and Slim Package Making it Easy to Make 2SB1202/2SD1802−used Sets Smaller
● These Devices are Pb−Free and are RoHS Compliant

APPLICATIONS

● Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment

ABSOLUTE MAXIMUM RATINGS

at TA = 25°C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (−)60 V Collector to Emitter Voltage VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current IC (−)3 A Collector Current (Pulse) ICP (−)6 A Collector Dissipation PC 1 W TC = 25°C 15 W Junction Temperature TJ 150 °C Storage Temperature TSTG − 55 to °C +150 Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2.4 1 3 (For PNP, the polarity is...
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