Datasheet Details
| Part number | 2SD1980 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.42 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1980 Download (PDF) |
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| Part number | 2SD1980 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.42 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1980 Download (PDF) |
|
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·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary PNP types:2SB1316 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1980 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1980 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=50uA BVCEO Collector-Emitter breakdown voltage IC=5mA BVEBO Emitter-Base breakdown voltage IE=5mA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 1mA ICBO Collector Cutoff Current VCB= 100V;
IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1980 | Power Transistor | Rohm |
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