2SD1980 - Power Transistor

Datasheet Summary

Features

1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.
inner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter.
Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 100 Collector-emitter voltage VCEO 100 Emitter-base voltage VEBO 6 Collector current Collector power dissipation IC PC 2 3 ∗1 1 10 Junction temperatur.

Rohm

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Datasheet Details

Part number	2SD1980
Manufacturer	ROHM
File Size	124.29 KB
Description	Power Transistor
Datasheet	2SD1980 Datasheet
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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. inner circuit C B R1 R2 E R1 3.

Published: Apr 3, 2005 |