ROHM Semiconductor 2SD1980
Power Transistor
| Part No. | 2SD1980 |
|---|---|
| Datasheet | 2SD1980 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.●inner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter
●Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 100 Collector-emitter voltage VCEO 100 Emitter-base voltage VEBO 6 Collector current Collector power dissipation IC PC 2 3 ∗1 1 10 Junction temperature Tj 150 Storage temperature ∗1 Single pulse Pw=100ms Tstg −55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) °C °C
●Packaging specifications and hFE Type 2SD1980 Package CPT3 hFE 1k to 10k Marking − Code TL Basic ordering unit (pieces) 2500 ∗ Denotes hFE
●Dimensions (Unit : mm) 2SD1980 6.5 5.1 2.3 0.5 0.9 5.5 1.5 1.5 9.5 0.8Min. 2.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 ROHM : CPT3 EIAJ : SC-63 0.5 1.0 (1) Base (2) Collector (3) Emitter
●Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Col...
