Inchange Semiconductor 2SD1980
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2SD1980 |
|---|---|
| Datasheet | 2SD1980 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Darlington connection for high DC current gain●Built in resistor between base and emitter
●Built in damper diode
●Complementary PNP types:2SB1316
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Motor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1980 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1980ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=50uA BVCEO Collector-Emitter breakdown voltage IC=5mA BVEBO Emitter-Base breakdown voltage IE=5mA V...