Datasheet4U Logo Datasheet4U.com

2SD2102 - Silicon NPN Power Transistor

The 2SD2102 by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the 2SD2102 Silicon NPN Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number 2SD2102
Manufacturer Inchange Semiconductor
File Size 154.89 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD2102-InchangeSemiconductor.pdf
Additional preview pages of the 2SD2102 datasheet.

2SD2102 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation

📁 2SD2102 Similar Datasheet

  • 2SD2100 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2101 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2103 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2104 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2105 - Silicon NPN Transistor (Hitachi)
  • 2SD2106 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2107 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2108 - Silicon NPN Transistor (Hitachi Semiconductor)
Other Datasheets by Inchange Semiconductor
Published: |