2SD2102 Overview
2SD2102 Transient θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time.
| Part number | 2SD2102 |
|---|---|
| Datasheet | 2SD2102_HitachiSemiconductor.pdf |
| File Size | 335.33 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon NPN Triple Diffused Transistor |
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2SD2102 Transient θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SD2102 | Silicon NPN Power Transistor | Inchange Semiconductor |
See all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 2SD2101 | Silicon NPN Transistor |
| 2SD2103 | Silicon NPN Transistor |
| 2SD2104 | Silicon NPN Transistor |
| 2SD2106 | Silicon NPN Transistor |
| 2SD2107 | Silicon NPN Transistor |
| 2SD2108 | Silicon NPN Transistor |
| 2SD2111 | Silicon NPN Transistor |
| 2SD2115 | Silicon NPN Epitaxial Planar Transistor |
| 2SD2115L | Silicon NPN Transistor |
| 2SD2115S | Silicon NPN Transistor |