Datasheet Details
| Part number | 2SD2106 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2106-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2106 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2106-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2106 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2106 | Silicon NPN Transistor | Hitachi Semiconductor |
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