2SD2106 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
- Part: 2SD2106
- Manufacturer: Inchange Semiconductor
- Size: 193.76 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SD2106 | Silicon NPN Transistor |