The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SD2106
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter ID 3 kΩ (Typ) 200 Ω (Typ) 3
12 3
2SD2106
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Rating 120 120 7 6 10 2 25 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions I C = 0.
2SD2106 Datasheet
