2SD2102
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V.
- Part: 2SD2102
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 154.89 KB
Datasheets by Manufacturer
- 2SD2100 — SANYO — PNP/NPN Epitaxial Planar Silicon Transistors
- D2100 — SANYO — 2SD2100
- 2SD2105 — Inchange Semiconductor — Silicon NPN Darlington Power Transistor
- 2SD2107 — Inchange Semiconductor — NPN Transistor
- 2SD2108 — Hitachi Semiconductor — Silicon NPN Transistor
- D2104 — Hitachi Semiconductor — 2SD2104
- 2SD2104 — Inchange Semiconductor — NPN Transistor
- 2SD2106 — Inchange Semiconductor — NPN Transistor
- D2107 — Renesas — 2SD2107
- 2SD2101 — Inchange Semiconductor — NPN Transistor