Datasheet Summary
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
APPLICATIONS
- Designed for low frequency power amplifier...
