2SD2105 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A ·High DC Current Gain.
- Part: 2SD2105
- Manufacturer: Inchange Semiconductor (official site)
- Size: 197.26 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SD2105 | Silicon NPN Transistor |