2SD2103 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused .. Application Low frequency power amplifier Outline TO-220FM 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current .. Symbol VCBO VCEO VEBO IC IC(peak) PC PC- Rating 60 60 7 8 12 2 25 150 - 55 to +150 Unit V V V A A W Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 60 7 - - 1000 - - - - Typ - - - - - - - - - - Max - - - 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions IC = 0.1 m A, IE = 0 IC = 25 m A, RBE = ∞ IE = 50 m A, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 3 V, IC = 4 A- Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. h FE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 m A- IC = 4 A, IB = 8 m A- IC = 8 A, IB = 80 m A-...