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Inchange Semiconductor

2SD250A Datasheet Preview

2SD250A Datasheet

Silicon NPN Power Transistors

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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
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2SD350A
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
·
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=90
VALUE
1500
700
5
5
7
22
150
-55~150
UNIT
V
V
V
A
A
W




Inchange Semiconductor

2SD250A Datasheet Preview

2SD250A Datasheet

Silicon NPN Power Transistors

No Preview Available !

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2A
VBEsat Base-emitter saturation voltage
IC=4.5 A;IB=2A
ICBO Collector cut-off current
VCB=800V;IE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=10V
Product Specification
www.DataSheet4U.com
2SD350A
MIN TYP. MAX UNIT
700 V
5V
1.0 V
1.3 V
10 μA
8
3
2


Part Number 2SD250A
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
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2SD250A Datasheet PDF






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