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2SD2531 - Silicon NPN Power Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A High Power Dissipation- : PC= 25W@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃

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Datasheet Details

Part number 2SD2531
Manufacturer Inchange Semiconductor
File Size 208.08 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2531 isc website：www.iscsemi.
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