2SD2531 Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications 2SD2531 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (typ.) (IC = 2.5 A, IB = 0.25 A) High power dissipation:.
- Part: 2SD2531
- Manufacturer: Toshiba
- Size: 124.15 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SD2531 | Silicon NPN Power Transistor |