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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2531
Power Amplifier Applications
2SD2531
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (typ.) (IC = 2.5 A, IB = 0.25 A)
• High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 4 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
25
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
SC-67 2-10R1A
Note: Using continuously under heavy loads (e.g.
2SD2531 Datasheet
