Datasheet Details
| Part number | 2SD2531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.08 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2531-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.08 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2531-InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2531 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2531 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2531 | Silicon NPN Transistor | Toshiba Semiconductor |
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