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2SD2689 - Silicon NPN Power Transistor

Description

High speed.

High breakdown voltage(VCBO=1500V).

High reliability(Adoption of HVP process).

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Output Applications.

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Datasheet preview – 2SD2689

Datasheet Details

Part number 2SD2689
Manufacturer Inchange Semiconductor
File Size 208.85 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD2689 Datasheet
Additional preview pages of the 2SD2689 datasheet.

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isc Silicon NPN Power Transistor DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV Horizontal Deflection Output Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 25 A IB Base Current-Continuous 3.5 A Total Power Dissipation @TC=25℃ 35 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2689 isc website：www.iscsemi.
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