Datasheet Details
| Part number | 2SD525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.57 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD525_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.57 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD525_InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A ·plement to Type 2SB595 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Remended for 30W high fidelity audio frequency amplifier output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IE Emitter Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD525 isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD525 | NPN Transistor | Toshiba |
 |
2SD525 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD523 | Silicon NPN Darlington Power Transistor |
| 2SD526 | Silicon NPN Power Transistors |
| 2SD5011 | Power Transistor |
| 2SD5070 | Power Transistor |
| 2SD5071 | Silicon NPN Power Transistors |
| 2SD5072 | Silicon NPN Power Transistors |
| 2SD5074 | Power Transistor |
| 2SD5075T | Silicon NPN Power Transistors |
| 2SD5076 | Silicon NPN Power Transistors |
| 2SD557 | Silicon NPN Power Transistor |