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SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE ( sat )=2.0V(Max. • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
10.3MAX. ^3.6±0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Emitter Current Base Current
Collector Power Dissipation (Tc=25°C)
Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO VEBO ic IE IB
pC
Tj T stg
RATING 100 100
5
5
-5
4
UNIT V V V A A A
40 W
150 -55VL50
°C °C
1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER
JEDEC
TO — 220AB
TOSHIBA
2 — 10 A 1 A
Mounting Kit No. AC75 Weight : 1.
2SD525 Datasheet
