Datasheet Summary
SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
Features
- High Breakdown Voltage : VCEO=100V
- Low Collector Saturation Voltage : VCE ( sat )=2.0V(Max.
- plementary to 2SB595.
- Remended for 30W High Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
10.3MAX. ^3.6±0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Emitter Current Base Current
Collector Power Dissipation (Tc=25°C)
Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO VEBO ic IE IB pC
Tj T stg
RATING 100 100
-5
UNIT V V V A A A
40 W
150 -55VL50
°C °C
1. BASE 2. COLLECTOR (HEAT SINK) a...
