Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4.0A
- plement to Type 2SB595
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
- Remended for 30W high fidelity audio frequency amplifier output stage...
