Datasheet Details
| Part number | 2SD525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.57 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD525_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.57 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD525_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A ·Complement to Type 2SB595 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 30W high fidelity audio frequency amplifier output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IE Emitter Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD525 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD525 | NPN Transistor | Toshiba |
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2SD525 | SILICON POWER TRANSISTOR | SavantIC |
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