2SD525 - Silicon NPN Power Transistors

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A Complement to Type 2SB595 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power a

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2SD525 silicon npn power transistors by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD525
Manufacturer	Inchange Semiconductor
File Size	213.57 KB
Description	Silicon NPN Power Transistors
Datasheet	2SD525 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A ·Complement to Type 2SB595 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 30W high fidelity audio frequency amplifier output stage applications.