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2SD525 - Silicon NPN Power Transistors

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Part number 2SD525
Manufacturer Inchange Semiconductor
File Size 213.57 KB
Description Silicon NPN Power Transistors
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A Complement to Type 2SB595 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 30W high fidelity audio frequency amplifier output stage applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba

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