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Inchange Semiconductor

2SK1118 Datasheet Preview

2SK1118 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1118
DESCRIPTION
·Drain Current ID=6A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
600 V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=256 A
Total Dissipation@TC=25
45 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
2.77
Thermal Resistance,Junction to Ambient 62.5
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn




Inchange Semiconductor

2SK1118 Datasheet Preview

2SK1118 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1118
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD Forward On-Voltage
IS=6A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=3A;
RL=100Ω
toff Turn-off time
MIN TYP. MAX UNIT
600 V
1.5 3.5 V
0.95 1.25
Ω
±100 nA
300 uA
2.0 V
25 50 ns
40 80 ns
20 40 ns
80 170 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number 2SK1118
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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