| Part Number | 2SK1118 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted . . |
2SK1118 Datasheet and Specifications PDF
The 2SK1118 is a Silicon N-Channel MOSFET.
| Part Number | 2SK1118 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | SEMTECH |
| Overview | 2SK1118 N-Channel Enhancement Mode Field Effect Transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collec. ce at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Turn-On Delay Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω Turn-On Rise Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω Turn-Off Delay Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω Turn-Off Fall . |
| Part Number | 2SK1118 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed. Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD Forward On-Voltage IS=6A; VGS=0 tr Rise time to. |