Datasheet Details
| Part number | 2SK3563 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 279.30 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK3563 Download (PDF) |
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| Part number | 2SK3563 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 279.30 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK3563 Download (PDF) |
|
|
|
·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 35 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.57 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0;
isc N-Channel MOSFET Transistor 2SK3563.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK3563 | N-Channel MOSFET | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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