3DD101B - Silicon NPN Power Transistor

Description

With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABS

Inchange Semiconductor

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Datasheet Details

Part number	3DD101B
Manufacturer	Inchange Semiconductor
File Size	183.28 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD101B Datasheet
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.

Published: Jun 18, 2016 |