| Part Number | 3DD101B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A. |