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3DD101B Datasheet

The 3DD101B is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number3DD101B
ManufacturerInchange Semiconductor
Overview ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A.
Part Number3DD101B
DescriptionPower Transistor
ManufacturerSJ
Overview Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http://. .