4N65 transistor equivalent, n-channel mosfet transistor.
*Designed for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE .
*Drain Current ID= 4A@ TC=25℃
*Drain Source Voltage-
: VDSS= 650V(Min)
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high efficiency switch mo.
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