4N65 - N-Channel MOSFET Transistor

Description

Drain Current ID= 4A@ TC=25℃ Drain Source Voltage- : VDSS= 650V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high efficiency switch mode power supply.

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	4N65
Manufacturer	Inchange Semiconductor
File Size	229.09 KB
Description	N-Channel MOSFET Transistor
Datasheet	4N65 Datasheet
Additional preview pages of the 4N65 datasheet.

📁 Similar Datasheet

4N65 - Power MOSFET (Zibo Seno)
4N65 - N-Channel Power MOSFET (Unisonic Technologies)
4N65 - 650V N Channel Power MOSFET (JINAN JINGHENG)
4N65 - N-Channel MOSFET (PINGWEI)
4N65-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-E - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-ML - N-CHANNEL POWER MOSFET (UTC)
4N65-N - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-R - N-CHANNEL POWER MOSFET (Unisonic Technologies)

Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 106 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.

Published: Jun 18, 2016 |