Datasheet Details
| Part number | 5N60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.63 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 5N60-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·.
| Part number | 5N60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.63 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 5N60-InchangeSemiconductor.pdf |
|
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·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5.6 A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 5N60 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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5N60 | N-Channel Power MOSFET | nELL |
| ROUM | 5N60 | 5A 600V N-channel Enhancement Mode Power MOSFET | ROUM |
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5N60 | N-CHANNEL POWER MOSFET | UTC |
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5N60 | N-Channel MOSFET | HAOHAI |
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5N60-CB | N-CHANNEL MOSFET | UTC |
| Part Number | Description |
|---|---|
| 5N65 | N-Channel MOSFET Transistor |
| 5N65K | N-Channel MOSFET Transistor |