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5N80 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 5.5A@ TC=25℃ Drain Source Voltage : VDSS= 800V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Designed for high current, high speed switching, switch mode power supplies (S

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isc N-Channel MOSFET Transistor 5N80 ·DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS) ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5.5 A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.