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AP9997GH - N-Channel MOSFET Transistor

Description

and solenoid drive.

Features

  • Drain Current : ID= 15A@ TC=25℃.
  • Drain Source Voltage : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – AP9997GH

Datasheet Details

Part number AP9997GH
Manufacturer Inchange Semiconductor
File Size 286.20 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet AP9997GH Datasheet
Additional preview pages of the AP9997GH datasheet.

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    isc N-Channel MOSFET Transistor AP9997GH FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 96 W TJ Max.
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