Datasheet Details
| Part number | AP9997GJ-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 117.75 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP9997GJ-HF AP9997GH-HF Datasheet (PDF) |
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Overview: AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AP9997GJ-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 117.75 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP9997GJ-HF AP9997GH-HF Datasheet (PDF) |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.The through-hole version (AP9997GJ) are available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 11 7 30 34.7 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.6 62.5 110 Units ℃/W ℃/W ℃/W Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 201006022 Free Datasheet http://www.datasheet4u.com/ AP9997GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=8A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AP9997GH | N-Channel MOSFET Transistor | Inchange Semiconductor |
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AP9997GK | N-Channel 100V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP9997GJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |