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AP9997GJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9997GJ-HF datasheet PDF. This datasheet also covers the AP9997GH-HF variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP9997GH-HF_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9997GJ-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GK N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GK-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 120mΩ 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.The through-hole version (AP9997GJ) are available for low-profile applications.