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AP9997GH

Manufacturer: Inchange Semiconductor

AP9997GH datasheet by Inchange Semiconductor.

AP9997GH datasheet preview

AP9997GH Datasheet Details

Part number AP9997GH
Datasheet AP9997GH-InchangeSemiconductor.pdf
File Size 286.20 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
AP9997GH page 2

AP9997GH Overview

·motor drive, DC-DC converter, power switch and solenoid drive. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ,...

AP9997GH Key Features

  • Drain Current : ID= 15A@ TC=25℃ -Drain Source Voltage

AP9997GH-HF from other manufacturers

View AP9997GH-HF datasheet index

Brand Logo Part Number Description Other Manufacturers
Advanced Power Electronics Logo AP9997GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics Logo AP9997GH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics Logo AP9997GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics Logo AP9997GJ-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics Logo AP9997GK N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
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