AP9997GK Overview
AP9997GK-VB AP9997GK-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.120 at VGS = 4.5 V ID (A) 5.0 4.5 SOT-223 D S D.
AP9997GK Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFETs
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC
