AP9997GK - N-Channel 100V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFETs.
175 °C Maximum Junction Temperature.
Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

AP9997GK n-channel 100v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	AP9997GK
Manufacturer	VBsemi
File Size	238.56 KB
Description	N-Channel 100V MOSFET
Datasheet	AP9997GK Datasheet

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Full PDF Text Transcription (Reference)

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AP9997GK-VB AP9997GK-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.120 at VGS = 4.5 V ID (A) 5.0 4.5 SOT-223 D S D G FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 5.0 4.5 3.5 3.